The SICC Advanced Research Institute is established recently to explore the innovation of silicon carbide substrate material.

The outstanding technology R&D capability has always been one of the core competitiveness of SICC. The company believesScience Has No Borders, and becomes more open for cooperations, especially after the IPO. The new founded Advanced Research Institute will explore the new directions, new technologies and new fields. It will work with the famous universities, enterprises, organizations and platforms at home and abroad to develop a series of forward-looking and ground-breaking technologies in crystal growth, wafering and application of silicon carbide substrate material. The Institute shall make its own contribution to the development of the silicon carbide industry chain.